Short-timescale thermal mapping of semiconductor devices

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 169-171

  Ju, Y S ^a,b   Kading O W ^b,c   Leung, Y K ^a,b   Wong, S S ^a,b   Goodson, K E ^a,b  

^a IEEE   (United States)

^b Stanford University ^*  (United States)

^c TEMIC TELEFUNKEN Microlectron GmbH ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; MOSFET DEVICES; TEMPERATURE MEASUREMENT; THERMAL GRADIENTS;

THERMAL MAPPING;

SEMICONDUCTOR DEVICES;

EID: 0031139570     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568750     Document Type: Article

References (16)

1. A. Amerasekra and J. Verwey, "ESD in integrated circuits," Qual. Reliab. Eng. Int., vol. 8, pp. 259-272, 1992.
2. M. Chan, S. S. Yuen, Z.-J. Ma, K. Hui, P. K. Ko, and C. Hu, "Comparison of ESD protection capability of SOI and bulk CMOS output buffers," in Proc. IEEE Int. Reliab. Phys. Symp., San Jose, CA, Apr. 11-14, 1994, pp. 292-298.
3. R. Ostermeier, K. Brunner, G. Abstreiter, and W. Weber, "Temperature distribution in Si-MOSFET's studied by micro Raman spectroscopy," IEEE Trans. Electron Devices, vol. 39, pp. 858-863, 1992.
4. R. J. T. Bunyan, M. J. Uren, J. C. Alderman, and W. Eccleston, "Use of noise thermometry to study the effects of self-heating in submicrometer SOI MOSFET's," IEEE Electron Device Lett., vol. 13, pp. 279-281, 1992.
5. K. E. Goodson, M. I. Flik, L. T. Su, and D. A. Antoniadis, "Prediction and measurement of temperature fields in silicon-on-insulator electronic circuits," ASME J. Heat Transfer, vol. 117, pp. 574-581, 1995.
6. A. Majumdar, J. P. Carrejo, and J. Lai, "Thermal imaging using the atomic force microscope," Appl. Phys. Lett., vol. 62, pp. 2501-2503, 1993.
7. Y. K. Leung, Y. Suzuki, K. E. Goodson, and S. S. Wong, "Self-heating effect in lateral DMOS on SOI," in 7th Int. Symp. Power Semiconductor Devices and IC's, Yokohama, Japan, May 23-25, 1995, pp. 136-140.
8. E. Arnold, H. Pein, and S. P. Herko, "Comparison of self-heating effects in bulk-silicon and SOI high-voltage devices," in IEDM Tech. Dig., 1994, pp. 813-816.
9. E. Welsch, M. Reichling, C. Gobel, D. Schafer, and E. Matthias, "Modulated thermoreflectance imaging of hidden electric current distributions in thin-film layered structures," Appl. Phys. Lett., vol. 61, pp. 916-918, 1992.
10. W. Claeys, F. Giroux, S. Dilhaire, C. Gounelle, V. Quintard, and P. Mortini, "Temperature measurements on metallic lines under current stress by laser probing and correlation with electromigration tests at wafer level," Multilevel Interconnection, SPIE, vol. 2090, pp. 197-202, 1993.
11. C. P. Grigoropoulos, A. A. Rostami, X. Xu, S. L. Taylor, and H. K. Park, "Transient reflectivity measurements and heat transfer modeling in laser annealing of semiconductor films," Int. J. Heat Mass Transfer, vol. 36, pp. 1219-1229, 1993.
12. P. W. Epperlein, "Micro-temperature measurements on semiconductor laser mirrors by reflectance modulation: A newly developed technique for laser characterization," Jpn. J. Appl. Phys., vol. 32, no. 12A, pp. 5514-5522, 1993.
13. K. E. Goodson, O. W. Käding, M. Rösler, and R. Zachai, "Experimental investigation of thermal conduction normal to diamond-silicon boundaries," J. Appl. Phys., vol. 77, no. 4, pp. 1385-1392, 1995.
14. C. G. Shirley, "Steady-state temperature profiles in narrow thin-film conductors," J. Appl. Phys., vol. 57, no. 3, pp. 777-784, 1985.
15. K. E. Goodson, Y. S. Ju. M. Asheghi, O. W. Käding, M. N. Touzelbaev, Y. K. Leung, and S. S. Wong, "Microscale thermal characterization of high-power silicon-on-insulator transistors," (and references therein) in Proc. 31st ASME National Heat Transfer Conf., Houston, TX, Aug. 1996, vol. 5, pp. 1-9.
16. Y. S. Ju and K. E. Goodson, "Short-timescale thermal mapping of interconnects," presented at Int. Reliab. Phys. Symp., Denver, CO, April 7-10, 1997.