Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications

Journal of Electroceramics

Volumn 17, Issue 2-4, 2006, Pages 387-391

  Jang, Bo Yun ^a   Kim, Beom Jong ^a   Jeong, Young Hun ^a   Nahm, Sahn ^a   Sun, Ho Jung ^b   Lee, Hwack Ju ^c  

^a Korea University   (South Korea)

^b Kunsan National University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

BaTi4O9; Capacitance density; Dissipation factor; Leakage current density; RF

Indexed keywords

CAPACITANCE; CAPACITORS; CURRENT DENSITY; DIELECTRIC PROPERTIES; LEAKAGE CURRENTS; MIM DEVICES; MOLECULAR STRUCTURE; THIN FILMS;

CAPACITANCE DENSITY; DISSIPATION FACTOR; LEAKAGE CURRENT DENSITY; TEMPERATURE COEFFICIENTS OF CAPACITANCE;

BARIUM TITANATE;

EID: 33847335115     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-006-9637-2     Document Type: Conference Paper

References (17)

1. J.A. Babcock, S.G. laster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, and B. El-Kareh, IEEE Elec. Dev. Lett., 22, 230 (2001).
2. A. Farcy, J. Torres, V. Arnal, M. Fayolle, H. Feldis, F. Jourdan, M. Assous, J.L. Di Maria, V. Vidai, Microelec. Eng., 70, 368 (2003).
3. S.B. Chen, C.H. Lai, A. Chin, J.C. Hsieh, and J. Liu, IEEE MTT-S Digest, 201 (2002).
4. S.B. Chen, C.H. Lai, A. Chin, J.C. Hsieh, and J. Liu, IEEE Elec. Dev. Lett., 23, 185 (2002).
5. M.Y. Yang, C.H. Huang, A. Chin, C. Zhu, B.J. Cho., M.F. Li, and D. L. Kwong, IEEE Microwave and Wireless Compo. Lett., 13, 431 (2003).
6. H. Hu, C. Zhu, B.J. Cho, and W.K. Choi, IEEE Elec. Dev. Lett., 23, 514 (2002).
7. S.J. Kim, B.J. Cho, M.F. Li, X. Yu, C. Zhu, A. Chin, and D.L. Kwong, IEEE Elec. Dev. Lett., 24, 387 (2003).
8. S.J. Ding, H. Hu, H.F. Lim, S.J. Kim, X.F. Yu, C. Zhu, B.J. Cho, D. S.H. Chan, S.C. Rustagi, M.B. Yu, A. Chin, and D.L. Kwong, IEEE Elec. Dev. Lett., 23730 (2002).
9. H. Hu, C. Zhu, X. Yu, A. Chin, M.F. Li, B.J. Cho, D.L. Kwong, P.D. Foo, M.B. Yu, X. Liu, and J. Winkler, IEEE Elec. Dev., Lett. 24, 60 (2003).
10. S.J. Ding, H. Hu, C. Zhu, S.J. Kim, X. Yu, M.F. Li, B.J. Cho, D.S.H. Chan, M.B. Yu, S.C. Rustagi, A. Chin, and D.L. kwong, IEEE Tran. Elec. Devs., 51, 886 (2004).
11. T. Negas, G. Yeager, S. Bell, N. Coats, and I. Minis, J. Am. Ceram. Soc. Bull, 72, 80 (1993).
12. J.H. Choy, Y.S. Han, J.H. Sohn, and M. Itoh, J. Am. Ceram. Soc., 78, 1169 (1995).
13. M. Cernea, E. Chirtop, D. Neacsu, I. Pasuk, and S. Iordanescu, J. Am. Ceram. Soc., 85, 499 (2002).
14. Z. Ma, Z. Becker, A.J. Polakos, P. Huggins, H. Pastalan, J. Wu, H. Watts, K. Wong, Y.H., and Mankiewich, IEEE Trans. Ele. Dev., 45, 1811 (1998).
15. Y.J. Kim, J. Oh, T.G. Kim, and B.W. Park, Appl. Phy. Lett., 78, 2363 (2001).
16. B.Y. Jang, Y.H. Jeong, S.J. Lee, S. Nahm, H.J. Sun, and H.J. Lee, J. Eur. Cer. Soc., (in press).
17. The International Technology Roadmap for Semiconductors (2004).