Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4288, Issue , 2001, Pages 335-344

  Wenus, J ^a   Rutkowski, J ^a   Rogalski, A ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Heterojunction; HgCdTe photodiodes; Homojunction; Quantum efficiency; R0A product

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ENERGY GAP; HETEROJUNCTIONS; INTEGRATED CIRCUIT TESTING; MATHEMATICAL MODELS; PHOTOCURRENTS; QUANTUM EFFICIENCY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING; TWO DIMENSIONAL;

DOUBLE LAYER HETEROJUNCTION; HOMOJUNCTION; MERCURY CADMIUM TELLURIDE;

PHOTODIODES;

EID: 0034874584     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.429419     Document Type: Conference Paper

References (11)

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5. xTe heterojunctions
6. Numerical simulations for HgCdTe related detectors
7. Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n heterojunction photodiodes
8. Characterization of HgCdTe P-o-n heterojunction photodiodes and their defects using variable-area test structures
9. Advances in composition control for 16 μm LPE P-on-n HgCdTe heterojunction photodiodes for remote sensing applications at 60 K