Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)

Journal of Electroceramics

Volumn 17, Issue 2-4, 2006, Pages 145-149

  Liu, G X ^a   Shan, F K ^a   Park, J J ^a   Lee, W J ^a   Lee, G H ^a   Kim, I S ^a   Shin, B C ^a   Yoon, S G ^b  

^a Dong Eui University   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

Dielectric constant; Ga2O3 TiO2; Leakage current; PEALD

Indexed keywords

CURRENT DENSITY; DEPOSITION; DIELECTRIC FILMS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; PERMITTIVITY;

GA2O3-TIO2; PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD); REACTANT SOURCES;

GALLIUM COMPOUNDS;

EID: 33847228382     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-006-0461-5     Document Type: Conference Paper

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