Microscopic electroabsorption line shape analysis for Ga (AsSb) GaAs heterostructures

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Buckers C ^a   Blume, G ^a,b   Thranhardt A ^a   Schlichenmaier, C ^a   Klar, P J ^a,e   Weiser, G ^a   Koch, S W ^a   Hader, J ^c   Moloney, J V ^c   Hosea, T J C ^b   Sweeney, S J ^b   Wang, J B ^d   Johnson, S R ^d   Zhang, Y H ^d  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b Advanced Technology Institute   (United Kingdom)

^c UNIVERSITY OF ARIZONA   (United States)

^d Arizona State University   (United States)

^e JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENT; ELECTROABSORPTION; VOLTAGE MODULATION;

ABSORPTION; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

HETEROJUNCTIONS;

EID: 33847195407     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2433715     Document Type: Article

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