The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Nguyen, Phuong ^a   Bourdelle, K K ^a   Maurice, T ^a   Sousbie, N ^a   Boussagol, A ^a   Hebras, X ^a   Portigliatti, L ^a   Letertre, F ^a   Tauzin, A ^b   Rochat, N ^b  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON MICROSCOPY; HYDROGENATION; INFRARED RADIATION; ION IMPLANTATION; POINT DEFECTS;

DEFECT FORMATION; INFRARED ABSORPTION; ISOTHERMAL ANNEALING;

SILICON;

EID: 33847172715     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2432380     Document Type: Article

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