Optical emission spectroscopy of glow discharge plasma from SiH4-CH4 system

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 90, Issue 2, 2007, Pages 9-16

  Motohashi, Mitsuya ^a   Ashibu, Kenta ^a   Hiruta, Yasutaka ^a   Homma, Kazuaki ^a  

^a TOKYO DENKI UNIVERSITY   (Japan)

Author keywords

CH radical; Glow discharge plasma CVD; H2 radical; Optical emission spectroscopy; SiH radical

Indexed keywords

METHANE; OPTICAL EMISSION SPECTROSCOPY; PLASMA DIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIO FREQUENCY AMPLIFIERS; SILANES;

MONOSILANE; SOURCE GASES SEPARATED PLASMA;

GLOW DISCHARGES;

EID: 33847157812     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.20285     Document Type: Article

References (20)

1. Tsujimura T. Amorphous/microcrystalline silicon thin film transistor characteristics for large size oled television driving. Jpn J Appl Phys 1 Regul Pap Short Notes 2004;43:5122-5128.
2. Nebel CE. Electronic properties of CVD diamond. Semicond Sci Technol 2003;18:S1-S11.
3. Takano A, Tanda M, Shimosawa M, Wada T, Kamoshita T. Excitation frequency effects on stabilized efficiency of large-area amorphous silicon solar cells using flexible plastic film substrate. Jpn J Appl Phys 2 Lett 2003;42:L1312-L1314.
4. Akiyama M, Hanada M, Takao H, Sawada K, Ishida M. Excess noise characteristics of hydrogenated amorphous silicon p-i-n photodiode films. Jpn J Appl Phys 1 Regul Pap Short Notes 2002;41:2552-2555.
5. 4 rf discharge using infrared diode-laser absorption spectroscopy. J Phys D 1998;31:776-780.
6. 2 plasmas. Jpn J Appl Phys 1 Regul Pap Short Notes 1995;34:3273-3277.
7. 2 radicals in a radio-frequency silane plasma. Jpn J Appl Phys 2 Lett 1993;32:L543-L546.
8. 2 rf discharge under high temperature deposition conditions of silicon carbide. Jpn J Appl Phys 1 Regul Pap Short Notes 1994;33:4304-4307.
9. 4 plasmas. J Vac Sci Technol A 1999; 17:2475-2484.
10. Andújar JL, Pascual E, Viera G, Bertran E. Optical emission spectroscopy of rf glow discharge of methane-silane mixtures. Thin Solid Films 1998;317:120-123.
11. Motohashi M, Homma K. Optical properties of a-SiC:H films prepared by plasma CVD method dissociating source gases separately. Trans IEICE 2001;J84-C:508-515.
12. Pearse RWB, Gaydon AG. The identification of molecular spectra, 4th ed. Chapman & Hall; 1976.
13. Tachibana K. Vapor phase and surface reaction mechanisms in formation of diamond thin films. In: Yukimura K (editor). Latest diamond thin film technology. Integrated Technology Center, Tokyo; 1988. p 40-57.
14. Matsuda A, Nomoto K, Takeuchi Y, Suzuki A, Yuuki A, Perrin J. Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon. Surf Sci 1990;227:50-56.
15. Bera K, Farouk B, Lee YH. Simulation of thin carbon film deposition in a radio-frequency methane plasma reactor. J Electrochem Soc 1999;146:3264-3269.
16. Kawase M, Nakai T, Yamaguchi A, Hakozaki T, Hashimoto K. Numerical simulation of plasma chemical vapor deposition from silane: Effect of the plasma-substrate distance and hydrogen dilution. Jpn J Appl Phys 1 Regul Pap Short Notes 1997;36:3396-3407.
17. 4 plasma with parallel-plate electrodes. Jpn J Appl Phys 1 Regul Pap Short Notes 1994;33:5046-5050.
18. Lide DR. CRC handbook of chemistry and physics 80th. CRC Press; 1999.
19. Matsuda A. Effect of electron energy distribution function on plasma enhanced chemical-vapor-deposition process. J Japan Soc Plasma Sci Nuclear Fusion Res 2001;77:674-678.
20. Bruno G, Capezzuto P, Madan A. Plasma deposition of amorphous silicon-based materials. Academic Press; 1995.