Numerical simulation of plasma chemical vapor deposition from silane: Effects of the plasma-substrate distance and hydrogen dilution

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3396-3407

  Kawase, Motoaki ^a   Nakai, Tsuyoshi ^a   Yamaguchi, Akimasa ^a   Hakozaki, Tomohiro ^a   Hashimoto, Kenji ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Hydrogen dilution; Hydrogenated amorphous silicon; Numerical simulation; Plasma substrate separation; Rf plasma chemical vapor deposition

Indexed keywords

DILUTION; GAS PHASE POLYMERIZATION; HYDROGENATED AMORPHOUS SILICON; PLASMA CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; FILM GROWTH; HYDROGEN; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTING FILMS; SUBSTRATES;

SILANES;

EID: 0031167536     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3396     Document Type: Article

References (45)

1. C. C. Tsai, J. C. Knights, G. Chang and B. Wacker: J. Appl. Phys. 59 (1986) 2998.
2. N. Itabashi, N. Nishiwaki, M. Magane, S. Naito, T. Goto, A. Matsuda, C. Yamada and E. Hirota: Jpn. J. Appl. Phys. 29 (1990) L505.
3. M. J. McCaughey and M. J. Kushner: J. Appl. Phys. 65 (1989) 186.
4. A. Matsuda and K. Tanaka: J. Appl. Phys. 60 (1986) 2351.
5. M. Kawase, T. Masuda, M. Nagashima, T. Maki, Y. Miyamoto and K. Hashimoto: Jpn. J. Appl. Phys. 33 (1994) 3830.
6. J. Shirafuji, S. Nagata and M. Kuwagaki: Jpn. J. Appl. Phys. 25 (1986) 336.
7. C. C. Tsai, G. B. Anderson, R. Thompson and B. Wacker: J. Non-Cryst. Solids 114 (1989) 151.
8. S. Okamoto, Y. Hishikawa and S. Tsuda: Jpn. J. Appl. Phys. 35 (1996) 26.
9. R. Banerjee, S. N. Sharma, S. Chattopadhyay, A. K. Batabyal and A. K. Barua: J. Appl. Phys. 74 (1993) 4540.
10. S. Veprek, O. Ambacher, W. Rieger, K. Schopper and M. G. J. Veprek-Heijman: Mater. Res. Soc. Symp. Proc. 297 (1993) 13.
11. M. Coltrin, R. J. Kee and J. A. Miller: J. Electrochem. Soc. 133 (1986) 1206.
12. Y. Matsui, A. Yuuki, N. Morita and K. Tachibana: Jpn. J. Appl. Phys. 26 (1987) 1575.
13. A. Gallagher: J. Appl. Phys. 63 (1988) 2406.
14. P. A. Longeway, R. D. Estes and H. A. Weakliem: J. Phys. Chem. 88 (1984) 73.
15. P. A. Longeway, H. A. Weakliem and R. D. Estes: J. Phys. Chem. 88 (1984) 3282.
16. T. Shirafuji, K. Tachibana and Y. Matsui: Jpn. J. Appl. Phys. 34 (1995) 4239.
17. A. Yuuki, T. Kawahara and Y. Matsui: Kagaku Kogaku Ronbunshu 17 (1991) 758 [in Japanese].
18. J. Perrin, J. P. M. Schmitt, G. de Rosny, B. Drevillon, J. Huc and A. Lloret: Chem. Phys. 73 (1982) 383.
19. A. von Engel: Electric Plasmas: Their Nature and Uses (Tayler & Francis, London, 1983) p. 196.
20. P. Kocian: J. Non-Cryst. Solids 35/36 (1980) 195.
21. K. Tachibana, T. Okuyama, H. Harima and Y. Urano: Proc. 7th Int. Symp. Plasma Chem., Eindhoven, 1985 (Int. Union Pure Appl. Chem., 1985), Pure Appl. Chem. 57 (1985) 588.
22. F. J. Kampas: Semiconductors and Semimetals, ed. J. I. Pankove (Academic, Orlando, 1984) Vol. 21A, p. 153.
23. J. I. Delcroix: Gas-Phase Chemical Physics Database (Elsevier, Amsterdam, 1988) Pts. A-C.
24. M. J. Kushner: J. Appl. Phys. 63 (1988) 2532.
25. K. Tachibana, M. Nishida, II. Harima and Y. Urano: J. Phys. D 17 (1984) 1727.
26. A. Yuuki, Y. Matsui and K. Tachibana: Jpn. J. Appl. Phys. 26 (1987) 747.
27. E. R. Austin and F. W. Lampe: J. Phys. Chem. 81 (1977) 1134.
28. D. Mihelcic, V. Schubert, R. N. Schindler and P. Potzinger: J. Phys. Chem. 81 (1977) 1543.
29. P. E. Vanier, F. J. Kampas, R. R. Corderman and G. Rajeswaran: J. Appl. Phys. 56 (1984) 1812.
30. M. Coltrin, R. J. Kee and J. A. Miller: J. Electrochem. Soc. 131 (1984) 425.
31. T. L. Pollock, H. S. Sandhu, A. Jodhan and O. P. Strausz: J. Am. Chem. Soc. 95 (1973) 1017.
32. R. Becerra and R. Walsh: J. Phys. Chem. 91 (1987) 5765.
33. J. M. Jasinski and J. O. Chu: J. Chem. Phys. 88 (1988) 1678.
34. G. Inoue and M. Suzuki: Chem. Phys. Lett. 122 (1985) 361.
35. R. Robertson and A. Gallagher: J. Appl. Phys. 59 (1984) 3402.
36. J.-L. Guizot, K. Nomoto and A. Matsuda: Surf. Sci. 244 (1991) 22.
37. M. J. Kushner: J. Appl. Phys. 71 (1992) 4173.
38. A. Matsuda, K. Nomoto, Y. Takeuchi, A. Suzuki, A. Yuuki and J. Perrin: Surf. Sci. 227 (1990) 50.
39. G. Nolet: J. Electrocem. Soc. 122 (1975) 1030.
40. H. Nomura, A. Kono and T. Goto: Jpn. J. Appl. Phys. 33 (1994) 4165.
41. H. Nomura, A. Kono and T. Goto: Jpn. J. Appl. Phys. 34 (1995) 307.
42. M. J. Kushner: J. Appl. Phys. 62 (1987) 2803.
43. P. Ho, M. E. Coltrin, J. S. Binkley and C. F. Melius: J. Phys. Chem. 90 (1986) 3399.
44. J. R. Doyle, D. A. Doughty and A. Gallagher: J. Appl. Phys. 68 (1990) 4375.
45. R. C. Ross and J. Jaklik, Jr.: J. Appl. Phys. 55 (1984) 3785.