Surface oxidation kinetics of GaAs oxide growth by liquid phase chemical-enhanced technique

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4477-4480

  Wang, Hwei Heng ^a   Chou, Dei Wei ^a   Wu, Jau Yi ^a   Wang, Yeong Her ^a   Houng, Mau Phon ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AFM; GaAs; Liquid phase oxidation; Oxidation kinetics; XPS

Indexed keywords

COMPOSITION; FILM GROWTH; LIQUID PHASE EPITAXY; MODELS; OXIDATION; REACTION KINETICS; SOLUTIONS; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

LIQUID PHASE OXIDATION; OXIDE GROWTH; SELECTIVE OXIDATION; SURFACE OXIDATION KINETICS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034229214     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4477     Document Type: Article

References (10)

1. H. H. Wang, C. J. Huang, Y. H. Wang and M. P. Houng: Jpn. J. Appl. Phys. 37 (1998) L67.
2. J. Y. Wu, H. H. Wang, Y. H. Wang and M. P. Houng: IEEE Electron. Dev. Lett. EDL-20 (1999) 18.
3. H. H. Wang, Y. H. Wang and M. P. Houng: Jpn. J. Appl. Phys. 37 (1998) L988.
4. H. H. Wang, J. Y. Wu, Y. H. Wang and M. P. Houng: J. Electrochem. Soc. 146 (1999) 2328.
5. H. H. Wang, D. W. Chou, J. Y. Wu, Y. H. Wang and M. P. Houng: to be published in J. Appl. Phys. Mar. (2000).
6. Y. Okada, S. Amano, M. Kawabe and J. James S. Harris: J. Appl. Phys. 83 (1998) 7998.
7. G. P. Schwartz, G. J. Gualtieri, G. W. Kammoltt and B. Schwartz: J. Electrochem. Soc. 126 (1979) 1737.
8. C. W. Wilmsen, R. W. Kee and K. M. Geib: J. Vac. Sci. & Technol. 16 (1979) 1434.
9. H. H. Wang, D. W. Chou, Y. H. Wang and M. P. Houng: Phys. Scr. T79 (1999) 239.
10. T. H. Oh, D. L. Huffaker, L. A. Graham, H. Deng and D. G. Deppe: Electron. Lett. 32 (1996) 2024.