Silicon LEDs Emitting in the Band-to-Band Transition Region: Effect of Temperature and Current Strength

Physics of the Solid State

Volumn 46, Issue 1, 2004, Pages 40-44

  Emel'yanov, A M ^a   Sobolev, N A ^a   Shek, E I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0742269053     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1641917     Document Type: Conference Paper

References (10)

1. M. A. Green, J. Zhao, A. Wang, et al., Nature 412, 805 (2001).
2. Wai Lek Ng, M. A. Lourenco, R. M. Gwilliam, et al., Nature 410, 192 (2001).
3. A. A. Bergh and P. J. Dean, Light-Emitting Diodes (Clarendon, Oxford, 1976; Mir, Moscow, 1979).
4. B. Lax and S. F. Neustadter, J. Appl. Phys. 25 (9), 1148 (1954).
5. R. A. Smith, Semiconductors, 2nd ed. (Cambridge Univ. Press, Cambridge, 1978; Mir, Moscow, 1982).
6. Th. Dittrich, V. Yu. Timoshenko, J. Rappich, and L. Tsybeskov, J. Appl. Phys. 90 (5), 2310 (2001).
7. W. Michaelis and M. H. Pilkuhn, Phys. Status Solidi 36, 311 (1969).
8. W. van Roosbroeck and W. Shockley, Phys. Rev. 94 (6), 1558 (1954).
9. R. D. Altukhov and E. G. Kuzminov, Solid State Commun. 111, 379 (1999).
10. Yu. R. Nosov, Switching in Semiconductor Diodes (Nauka, Moscow, 1968; Plenum, New York, 1969).