Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-Al x Ga 1-x N

Solid-State Electronics

Volumn 47, Issue 5, 2003, Pages 931-935

  Burdett, William ^a   Osinsky, Andrei ^b   Kotlyarov, Vladimir ^c   Chow, Peter ^d   Dabiran, Amir ^d   Chernyak, Leonid ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Corning Incorporated ^*  (United States)

^c IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

^d SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; IONIZATION; MAGNESIUM PRINTING PLATES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING;

ELECTRON INJECTION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0037408026     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00449-5     Document Type: Article

References (17)

1. Pearton S.J., Zolper J.C., Shul R.J., Ren F. J. Appl. Phys. 86(1):1999;1-78.
2. Gotz W., Johnson N.M., Walker J., Bour D.P., Street R.A. Appl. Phys. Lett. 68(5):1996;667-669.
3. Qiu C.H., Pankove J.I. Appl. Phys. Lett. 70(15):1997;1983-1985.
4. Chernyak L., Osinsky A., Fuflyigin V., Schubert E.F. Appl. Phys. Lett. 77(6):2000;875-877.
5. Chernyak L., Nootz G., Osinsky A. Electron. Lett. 37(14):2001;922-923.
6. Chernyak L., Schulte A., Osinsky A., Graff J., Schubert E.F. Appl. Phys. Lett. 80(6):2002;926-928.
7. Chernyak L., Burdett W., Osinsky A. Appl. Phys. Lett. 81(9):2002;1633-1635.
8. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Osinsky A.V., Norris P.E., Pearton S.J.et al. J. Appl. Phys. 90(8):2001;4032-4038.
9. Gotz W., Kern R.S., Chen C.H., Liu H., Steigerwald D.A., Fletcher R.M. Mater. Sci. Eng. B. 59(1-3):1999;211-217.
10. Li J.Z., Lin J.Y., Jiang H.X., Salvador A., Botchkarev A., Morkoc H. Appl. Phys. Lett. 69(10):1996;1474-1476.
11. Sze S.M. Semiconductor devices physics and technology. 1985;Wiley & Sons, New York. 49-50.
12. Johnson C., Lin J.Y., Jiang H.X., Khan M.A., Sun C.J. Appl. Phys. Lett. 68(13):1996;1808-1810.
13. Chernyak L., Osinsky A., Schulte A. Solid-State Electron. 45(9):2001;1687-1702.
14. Li J., Oder T.N., Nakarmi M.L., Lin J.Y., Jiang H.X. Appl. Phys. Lett. 80(7):2002;1210-1212.
15. Lambert D.J.H., Wong M.M., Chowdhury U., Collins C., Li T., Kwon H.K.et al. Appl. Phys. Lett. 77(12):2000;1900-1902.
16. Schubert E.F., Grieshaber W., Goepfert I.D. Appl. Phys. Lett. 69(24):1996;3737-3739.
17. Rice A.K., Malloy K.J. J. Appl. Phys. 89(5):2001;2816-2825.