Electron tunneling spectroscopy study of traps in high- k gate dielectrics: Determination of physical locations and energy levels of traps

Applied Physics Letters

Volumn 86, Issue 19, 2005, Pages 1-2

  Wang, Miaomiao ^a   He, Wei ^a   Ma, T P ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING SPECTROSCOPY (ETS); GATE DIELECTRICS; TUNNEL BARRIERS; VOLTAGE BIAS;

CHEMICAL BONDS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; FERMI LEVEL; INTERFACES (MATERIALS); MOS DEVICES; PERMITTIVITY;

DIELECTRIC MATERIALS;

EID: 20844450916     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1924893     Document Type: Article

References (4)

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3. W. He and T. P. Ma, Appl. Phys. Lett. 83, 2605 (2003).
4. Wei He and T. P. Ma, Appl. Phys. Lett. 83, 5461 (2003).