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Volumn 44, Issue 2, 2004, Pages 423-426
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Defect-Free Ultra-Shallow Source/Drain Extension Using Spin-on-Dopants for Deep Submicron SOI MOSFET Applications
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Author keywords
Crystal defect; MOSFET; PLAD; Plasma doping; Short channel effect; SIMS; SOD; SOI; Solid phase diffusion; Source drain extension; SPD; Spin on dopants; TEM; Ultra shallow junction; USJ
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Indexed keywords
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EID: 1542381002
PISSN: 03744884
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (11)
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References (15)
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