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Volumn 44, Issue 2, 2004, Pages 423-426

Defect-Free Ultra-Shallow Source/Drain Extension Using Spin-on-Dopants for Deep Submicron SOI MOSFET Applications

Author keywords

Crystal defect; MOSFET; PLAD; Plasma doping; Short channel effect; SIMS; SOD; SOI; Solid phase diffusion; Source drain extension; SPD; Spin on dopants; TEM; Ultra shallow junction; USJ

Indexed keywords


EID: 1542381002     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (11)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.