Epitaxial growth of zinc oxide thin films on epi-GaN/sapphire (0001) by sol-gel technique

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3330-3334

  Sagar, Parmod ^a   Kumar, Manoj ^a   Mehra, R M ^a   Okada, H ^b   Wakahara, Akihiro ^b   Yoshida, Akira ^b  

^a UNIVERSITY OF DELHI   (India)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Epitaxial growth; GaN buffer layer; Sol gel; Zinc oxide

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH ENERGY ELECTRON DIFFRACTION; PHOTOLUMINESCENCE; SAPPHIRE; SOL-GELS; ZINC OXIDE;

EXCITON EMISSION; GAN BUFFER LAYERS; X-RAY DIFFRACTION SPECTRUM;

THIN FILMS;

EID: 33846919914     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.09.006     Document Type: Article

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