Growth of ZnO on sapphire (0001) by the vapor phase epitaxy using a chloride source

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 4 B, 1999, Pages

  Takahashi, Naoyuki ^a   Kaiya, Kazuhiko ^a   Nakamura, Takato ^a   Momose, Yoshimi ^a   Yamamoto, Hajime ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHLORINE COMPOUNDS; CRYSTAL ORIENTATION; ELECTRON EMISSION; FILM GROWTH; OXYGEN; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EFFECTS; VAPOR PHASE EPITAXY; ZINC OXIDE;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING FILMS;

EID: 0032626780     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l454     Document Type: Article

References (9)