Two-dimensional dopant profiling and imaging of 4H silicon carbide devices by secondary electron potential contrast

Microelectronics Reliability

Volumn 45, Issue 9-11, 2005, Pages 1499-1504

  Buzzo, M ^a,b   Ciappa, M ^b   Stangoni, M ^b   Fichtner, W ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON EMISSION; IMAGE ANALYSIS; SCANNING ELECTRON MICROSCOPY;

DELINEATION; DOPANT PROFILING; HOMOJUNCTIONS; SECONDARY ELECTRONS;

SILICON CARBIDE;

EID: 24144484175     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.07.069     Document Type: Conference Paper

References (9)

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