Carrier conduction in heterojunction of hydrogenated nanocrystalline silicon with crystal silicon

Thin Solid Films

Volumn 515, Issue 7-8, 2007, Pages 3997-4003

  Wei, Wensheng ^a   Xu, Gangyi ^b   Wang, Tianmin ^c   Shen, W Z ^d  

^a WENZHOU UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c BEIHANG UNIVERSITY   (China)

^d SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Carrier conduction mechanism; Heterojunction; Hydrogenated nanocrystalline silicon film

Indexed keywords

AMORPHOUS MATERIALS; ELECTRON TUNNELING; HETEROJUNCTIONS; HYDROGENATION; NANOSTRUCTURED MATERIALS; THERMIONIC EMISSION;

CARRIER AVALANCHE MULTIPLICATION; CARRIER CONDUCTION MECHANISM; HYDROGENATED NANOCRYSTALLINE SILICON FILMS; THERMIONIC EMISSION COMPONENT;

SEMICONDUCTING SILICON;

EID: 33846902624     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.09.052     Document Type: Article

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