Tunable few-electron quantum dots in InAs nanowires

Nanotechnology

Volumn 18, Issue 4, 2007, Pages

  Shorubalko, I ^a   Pfund, A ^a   Leturcq, R ^a   Borgstrom M T ^a   Gramm, F ^a   Muller E ^a   Gini, E ^a   Ensslin, K ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; TUNING;

NANOWIRES; SPINS; STABILITY DIAGRAMS; TUNNELLING BARRIERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846839557     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/4/044014     Document Type: Article

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