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Volumn 88, Issue 19, 2006, Pages

Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2 K

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB CHARGING ENERGY; INAS; QUANTUM COMPUTING; SINGLE-TOP-GATE TRANSISTOR;

EID: 33646678882     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202100     Document Type: Article
Times cited : (3)

References (16)
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    • Vertical Inx Ga1-x As quantum dots with well-defined Alx Ga1-x As tunneling barriers can overcome the difficulty in identification because this configuration provides no ambiguity in identifying a single electron in the dot by conductance spectroscopy. However cthis vertical approach does not provide an opportunity for scaling. See S. Tarucha, D. G. Austing, T. Honda, R. J. van der Hage, and L. P. Kouwenhoven, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.77. 3613 77, 3613 (1996); L. P. Kouwenhoven, T. H. Oosterkamp, M. W. S. Danoesastro, M. Eto, D. G. Austing, T. Honda, and S. Tarucha, Science 0036-8075 10.1126/science.278.5344.1788 278, 1788 (1997); T. Fujisawa, T. H. Oosterkamp, W. G. van der Wiel, B. W. Broer, R. Aguado, S. Tarucha, and L. P. Kouwenhoven, Science 0036-8075 10.1126/science.282.5390.932 282, 932 (1998); L. P. Kouwenhoven, D. G. Austing, and S. Tarucha, Rep. Prog. Phys. 64, 701 (2001).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.