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Volumn 815, Issue , 2004, Pages 83-88

Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; HETEROJUNCTIONS; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 12844261188     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j5.11     Document Type: Conference Paper
Times cited : (8)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.