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Volumn 815, Issue , 2004, Pages 83-88
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Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AMMONIA;
ATOMIC FORCE MICROSCOPY;
CHEMICAL VAPOR DEPOSITION;
CURRENT DENSITY;
ELECTRIC POTENTIAL;
EPITAXIAL GROWTH;
HETEROJUNCTIONS;
RESONANT TUNNELING;
SEMICONDUCTOR QUANTUM WELLS;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
CURRENT-VOLTAGE CHARACTERISTICS;
HOT FILAMENTS;
QUANTUM DEVICES;
ULTRA THIN FILMS;
SILICON COMPOUNDS;
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EID: 12844261188
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-815-j5.11 Document Type: Conference Paper |
Times cited : (8)
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References (13)
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