Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination

Applied Physics Letters

Volumn 90, Issue 4, 2007, Pages

  Kasu, M ^a   Ueda, K ^a   Yamauchi, Y ^a   Makimoto, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHANNEL CAPACITY; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS;

CAPACITANCE VOLTAGE CHARACTERISTICS; ENERGY BARRIER; GATE-SOURCE CAPACITANCE (CGS); HYDROGEN SURFACE TERMINATION;

FIELD EFFECT TRANSISTORS;

EID: 33846643167     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2436649     Document Type: Article

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