Molecular adsorption on GaAs studied by HREELS

Solid State Phenomena

Volumn 99-100, Issue , 2004, Pages 247-250

  Botelho Do Rego, A M ^a   Ferraria, A M ^a   Vilar, M Rei ^b   El Beghdadi, J ^b   Naaman, R ^c  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b UNIVERSITÉ PARIS DIDEROT   (France)

^c WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

Adsorption; GaAs surface; HREELS; Phosphonic acid

Indexed keywords

ADSORPTION; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR ORIENTATION; MOLECULAR VIBRATIONS; X RAY PHOTOELECTRON SPECTROSCOPY; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON IRRADIATION; ENERGY DISSIPATION; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULES; ORGANIC SOLVENTS; PASSIVATION; SEMICONDUCTING GALLIUM;

GAAS SURFACE; HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY (HREELS); PHOSPHONIC ACID; ELECTRONIC ENERGY LOSS; GAAS SURFACES; HIGH-RESOLUTION ELECTRON ENERGY LOSS SPECTRA; HREELS; INTERMOLECULAR BONDS; MOLECULAR ADSORPTION; PHENYLPHOSPHONIC ACIDS; PHOSPHONIC ACIDS;

GALLIUM COMPOUNDS; SUBSTRATES;

EID: 8644242281     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.99-100.247     Document Type: Conference Paper

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