Simplified model for absorber feature transmissions on EUV masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6349 II, Issue , 2006, Pages

  Lam, Michael C ^a,b   Neureuther, Andrew R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER EDGES; DEFECT SIMULATOR; THIN MASK MODEL;

COMPUTER SIMULATION; LIGHT ABSORPTION; LIGHT SCATTERING; MATHEMATICAL MODELS;

LIGHT TRANSMISSION;

EID: 33846629526     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.686209     Document Type: Conference Paper

References (7)

1. Ito, M., et al., "Simulation of multilayer defects in extreme ultraviolet masks." Japanese Journal of Applied Physics Part 1, 2001. 40(4A): p. 2549-53.
2. Besacier, M., et al. "The Rayleigh method applied to EUV lithography simulation." Proc. of SPIE, vol. 5037, 2003.
3. Evanschitzky, P., et al. "Simulation of extreme ultraviolet masks with defective multilayers." Proceedings of Spie, vol.5130, no.1, 26 Aug. 2003, pp.1035-45.
4. Lam, MC and AR Neureuther, "A 3D substrate and buried defect simulator for EUV mask blanks." SPIE, vol. 5751, 2005.
5. A. Wong, "Rigorous Three-Dimensional Time-Domain Finite-Difference Electromagnetic Simulation," Ph.D. Dissertation, University of California at Berkeley, 1994.
6. Bollepalli, B.S. and F. Cerrina. "On the computation of reflected images from extreme ultraviolet masks." Proceedings of Spie, vol.3676, 1999, pp.587-97.
7. th (Expanded) Edition, (Cambridge University Press, 1999), p. 40. Equation 8, 20, 21.