The Rayleigh method applied to EUV lithography simulation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5037 II, Issue , 2003, Pages 822-830

  Besacier, Maxime ^a,b   Schiavone, Patrick ^a   Granet, Gérard ^b   Farys, Vincent ^a  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

Defect; Diffraction; Electromagnetic; EUV lithography; Grating; Mask; Modal method; Rayleigh method; Simulation

Indexed keywords

COMPUTER SIMULATION; ELECTROMAGNETIC FIELD EFFECTS; ELECTROMAGNETISM; FINITE DIFFERENCE METHOD; MASKS; MATHEMATICAL MODELS; MODAL ANALYSIS; RAYLEIGH SCATTERING; TIME DOMAIN ANALYSIS; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET LITHOGRAPHY; FINITE DIFFERENCE TIME DOMAIN; MULTILAYER STACK; RAYLEIGH METHOD;

PHOTOLITHOGRAPHY;

EID: 0141724651     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.484977     Document Type: Conference Paper

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