MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrations

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1641-1644

  Nakajima, F ^a   Sanorpim, S ^b   Ono, W ^a   Katayama, R ^a   Onabe, K ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b CHULALONGKORN UNIVERSITY   (Thailand)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP ENERGY; NEAR-BAND-EDGE TRANSITION; TERTIARYBUTYLARSINE (TBA);

ARSENIC; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTOLUMINESCENCE; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33745056042     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565398     Document Type: Article

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