MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μm

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 591-594

  Germann, T D ^a   Strittmatter, A ^a   Kettler, Th ^a   Posilovic, K ^a   Pohl, U W ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

A1. Nanostructures; A1. Quantum dots; A3. Metal organic vapor phase epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

GROWTH PARAMETERS; SEMICONDUCTING III-V MATERIALS; THRESHOLD CURRENT DENSITIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846473216     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.081     Document Type: Article

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