Morphology of GaN surfaces and GaN/(Al, Ga)N interfaces grown on 6H-SiC(0001) by reactive molecular beam epitaxy

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 73-79

  Thamm, A ^a   Brandt, O ^a   Trampert, A ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SURFACE ROUGHNESS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

BROADENING EFFECT; GALLIUM NITRIDE; INTERFACE ROUGHNESS; SPIRAL GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034229278     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<73::AID-PSSA73>3.0.CO;2-B     Document Type: Article

References (11)

1. E. KIM, I. BERISHEV, I. RUSAKOVA, K. WATERS, J. A. SCHULZ, and A. BENSAOULA, J. Appl. Phys. 85, 1178 (1999).
2. E. J. TARSA, B. HEYING, X. H. WU, P. FINI, S. P. DENBAARS, and J. S. SPECK, J. Appl. Phys. 82, 5473 (1997).
3. O. BRANDT, R. MURALIDHARAN, P. WALTEREIT, A. THAMM, A. TRAMPERT, H. VON KIEDROWSKI, and K. H. PLOOG, Appl. Phys. Lett. 75, 4019 (1999).
4. A. THAMM, O. BRANDT, Y. TAKEMURA, A. TRAMPERT, and K. H. PLOOG, Appl. Phys. Lett. 75, 944 (1999).
5. N. GRANDJEAN, and J. MASSIES, Appl. Phys. Lett. 72, 1078 (1998).
6. W. KIM, Ö. AKTAS, A. E. BOTCHKAREV, S. N. MOHAMMED, and H. MORKOÇ, J. Appl. Phys. 79, 7657 (1996).
7. V. FIORENTINI, F. BERNARDINI, F. DELLA SALA, A. DI CARLO, and P. LUGLI, Phys. Rev. B 60, 8849 (1999).
8. U. JAHN, S. K. KWOK, M. RAMSTEINER, R. HEY, E. RUNGE, and H. T. GRAHN, Phys. Rev. B 54, 2733 (1996).
9. J. SINGH, K. K. BAJAJ, and S. CHAUDHURI, Appl. Phys. Lett. 44, 805 (1984).
10. J. SINGH and K. K. BAJAJ, J. Appl. Phys. 57, 5433 (1985).
11. A. THAMM, O. BRANDT, J. RINGLING, A. TRAMPERT, O. MAYROCK, H.-J. WÜNSCHE, F. HENNEBERGER, and K. H. PLOOG, Phys. Rev. B, submitted.