Preferential heights in the growth of Ag islands on Si(1 1 1)-(7 × 7) surfaces

Surface Science

Volumn 601, Issue 3, 2007, Pages 603-608

  Goswami, D K ^a   Bhattacharjee, K ^a   Satpati, B ^a   Roy, S ^a   Satyam, P V ^a   Dev, B N ^a,b  

^a INSTITUTE OF PHYSICS   (India)

^b DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

Ag growth on Si; Overlayers on surfaces; Preferential heights in island growth; Scanning tunneling microscopy

Indexed keywords

FILM GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SILICON; SILVER;

ATOMIC SCALE HEIGHTS; ISLAND GROWTH; OVERLAYERS; PREFERENTIAL HEIGHTS;

THIN FILMS;

EID: 33846441620     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.10.026     Document Type: Article

References (25)

1. Zhang Z.H., Hasegawa S., and Ino S. Phys. Rev. B 55 (1997) 9983
2. Roos K.R., and Tringides M.C. Surf. Sci. 302 (1994) 37
3. Meyer G., and Rieder K.H. Appl. Phys. Lett. 64 (1994) 3560
4. For reviews, see. Argile C., and Rhead G.E. Surf. Sci. Rep. 10 (1989) 277
5. Neddermeyer H. Crit. Rev. Solid State Mater. Sci. 16 (1990) 309
6. Venables J.A. Surf. Sci. 299/380 (1994) 789
7. Hasegawam S., et al. Prog. Surf. Sci. 60 (1999) 89
8. Hanbucken M., Futamoto M., and Venables J.A. Surf. Sci. 147 (1984) 433
9. van Leonen E.J., Iwami M., Tromp R.M., and van der Veen J.F. Surf. Sci. 137 (1984) 1
10. Chambers G.P., and Sartwell B.D. Surf. Sci. 218 (1989) 55
11. Gavioli L., Kimberlin K.R., Tringides M.C., Wendelken J.F., and Zhang Z. Phys. Rev. Lett. 82 (1999) 129
12. Zhang Z., Niu Q., and Shih C.-K. Phys. Rev. Lett. 80 (1998) 5381
13. Suo Z.G., and Zhang Z.Y. Phys. Rev. B 58 (1998) 5116
14. Huang L., Chey S.J., and Weaver J.H. Surf. Sci. 416 (1998) L1101
15. Sobotik P., Ostadal I., Myslivecek J., Jarolimek T., and Lavicky F. Surf. Sci. 482-485 (2001) 797
16. Su W.B., Lin H.Y., Chiu Y.P., Shih H.T., Fu T.Y., Chen Y.W., Chang C.S., and Tsong T.T. Phys. Rev. B 71 (2005) 073304
17. Su W.B., Chang S.H., Jian W.B., Chang C.S., Chen L.J., and Tsong T.T. Phys. Rev. Lett. 86 (2001) 5116
18. Okamoto H., Chen D., and Yamada T. Phys. Rev. Lett. 89 (2002) 256101
19. D.K. Goswami, K. Bhattacharjee, B. Satpati, S. Roy, G. Kuri, P.V. Satyam, B.N. Dev, Cond-mat/0311506.
20. Goswami D.K., Satpati B., Satyam P.V., and Dev B.N. Curr. Sci. 84 (2003) 903
21. Luh D.-A., Miller T., Paggel J.J., Chou M.Y., and Chiang T.-C. Science 292 (2001) 1131
22. Chiang T.-C. Surf. Sci. Rep. 39 (2000) 181
23. Wei C.M., and Chou M.Y. Phys. Rev. B 68 (2003) 125406
24. Wei C.M., and Chou M.Y. Phys. Rev. B 66 (2002) 233408
25. K. Bhattacharjee, D.K. Goswami, B.N. Dev, in: JSPS-141 Committee Activity Report, Proceedings of the Fifth International Symposium on Atomic Level Characterizations for New Materials and Devices, December 4-9, 2005, Hawaii, USA, pp. 160-162.