In situ monitoring of the growth procedure of InAs layer by spectral reflectance

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 50-53

  Ahn, Eungjin ^a   Lee, Young Soo ^a   Kim, Jungsub ^a   Kim, Young Dong ^b   Yoon, Euijoon ^a  

^a Seoul National University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

A1. In situ monitoring; A1. Spectral reflectance; A3. Metalorganic chemical vapor deposition; B1. GaAs; B1. InAs

Indexed keywords

ARSENIC COMPOUNDS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFLECTION; SURFACE STRUCTURE;

GAAS; IN SITU MONITORING; INAS; SPECTRAL REFLECTANCE;

INDIUM COMPOUNDS;

EID: 33846419535     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.041     Document Type: Article

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