SCOPUS 정보 검색 플랫폼

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 143-147

Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy

(5) Pohl, U W a Potschke K a Kaiander, I a Zettler, J T b Bimberg, D a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum dots; B1. InGaAs; B3. In situ reflectance; B3. Laser diodes; B3. Reflectance anisotropy spectroscopy

Indexed keywords

ANISOTROPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SPECTROSCOPIC ANALYSIS;

IN-SITU REFLECTANCE; INGAAS; QUANTUM DOT LASERS; REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTOR QUANTUM DOTS;

EID: 9944257418 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.102 Document Type: Conference Paper

Times cited : (17)

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