-
2
-
-
0021605304
-
Correlating the radiation response of MOS capacitors and transistors
-
Dec
-
P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, "Correlating the radiation response of MOS capacitors and transistors," IEEE Trans. Nucl. Sci., vol. 31, no. 6, pp. 1453-1460, Dec. 1984.
-
(1984)
IEEE Trans. Nucl. Sci
, vol.31
, Issue.6
, pp. 1453-1460
-
-
Winokur, P.S.1
Schwank, J.R.2
McWhorter, P.J.3
Dressendorfer, P.V.4
Turpin, D.C.5
-
3
-
-
0037706978
-
Total-dose radiation hardness assurance
-
Jun
-
D. M. Fleetwood and H. A. Eisen, "Total-dose radiation hardness assurance," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 552-564, Jun. 2003.
-
(2003)
IEEE Trans. Nucl. Sci
, vol.50
, Issue.3
, pp. 552-564
-
-
Fleetwood, D.M.1
Eisen, H.A.2
-
4
-
-
0024891032
-
Time-dependent degradation of MOSFET channel mobility following pulsed irradiation
-
Dec
-
F. B. McLean and H. E. Boesch, "Time-dependent degradation of MOSFET channel mobility following pulsed irradiation," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 1772-1783, Dec. 1989.
-
(1989)
IEEE Trans. Nucl. Sci
, vol.36
, Issue.6
, pp. 1772-1783
-
-
McLean, F.B.1
Boesch, H.E.2
-
5
-
-
0022185024
-
Correlation of radiation effects in transistors and integrated circuits
-
Dec
-
F. W. Sexton and J. R. Schwank, "Correlation of radiation effects in transistors and integrated circuits," IEEE Trans. Nucl. Sci., vol. 32, no. 6, pp. 3975-3981, Dec. 1985.
-
(1985)
IEEE Trans. Nucl. Sci
, vol.32
, Issue.6
, pp. 3975-3981
-
-
Sexton, F.W.1
Schwank, J.R.2
-
6
-
-
0026403223
-
Wafer-level radiation testing for hardness assurance
-
Dec
-
M. R. Shaneyfelt, K. L. Hughes, J. R. Schwank, F. W. Sexton, D. M. Fleetwood, P. S. Winokur, and E. W. Enlow, "Wafer-level radiation testing for hardness assurance," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1598-1605, Dec. 1991.
-
(1991)
IEEE Trans. Nucl. Sci
, vol.38
, Issue.6
, pp. 1598-1605
-
-
Shaneyfelt, M.R.1
Hughes, K.L.2
Schwank, J.R.3
Sexton, F.W.4
Fleetwood, D.M.5
Winokur, P.S.6
Enlow, E.W.7
-
7
-
-
0027886813
-
Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs
-
Dec
-
D. Zupac, K. F. Galloway, P. Khosropour, S. R. Anderson, R. D. Schrimpf, and P. Calvel, "Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1307-1315, Dec. 1993.
-
(1993)
IEEE Trans. Nucl. Sci
, vol.40
, Issue.6
, pp. 1307-1315
-
-
Zupac, D.1
Galloway, K.F.2
Khosropour, P.3
Anderson, S.R.4
Schrimpf, R.D.5
Calvel, P.6
-
8
-
-
0026385067
-
Response of interface traps during high-temperature anneals
-
Dec
-
A. J. Lelis, T. R. Oldham, and W. M. Delancey, "Response of interface traps during high-temperature anneals," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1590-1597, Dec. 1991.
-
(1991)
IEEE Trans. Nucl. Sci
, vol.38
, Issue.6
, pp. 1590-1597
-
-
Lelis, A.J.1
Oldham, T.R.2
Delancey, W.M.3
-
9
-
-
0024092433
-
High-temperature silicon-on-insulator electronics for space nuclear power systems: Requirements and feasibility
-
Oct
-
D. M. Fleetwood, F. V. Thome, S. S. Tsao, P. V. Dressendorfer, V. J. Dandini, and J. R. Schwank, "High-temperature silicon-on-insulator electronics for space nuclear power systems: Requirements and feasibility," IEEE Trans. Nucl. Sci., vol. 35, no. 5, pp. 1099-1112, Oct. 1988.
-
(1988)
IEEE Trans. Nucl. Sci
, vol.35
, Issue.5
, pp. 1099-1112
-
-
Fleetwood, D.M.1
Thome, F.V.2
Tsao, S.S.3
Dressendorfer, P.V.4
Dandini, V.J.5
Schwank, J.R.6
-
10
-
-
0023542207
-
A reevaluation of worst-case postirradiation response for hardened MOS transistors
-
Dec
-
D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, "A reevaluation of worst-case postirradiation response for hardened MOS transistors," IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp. 1178-1183, Dec. 1987.
-
(1987)
IEEE Trans. Nucl. Sci
, vol.34
, Issue.6
, pp. 1178-1183
-
-
Fleetwood, D.M.1
Dressendorfer, P.V.2
Turpin, D.C.3
-
11
-
-
0020718887
-
2 interface
-
Mar
-
2 interface," J. Appl. Phys., vol. 54, no. 3, pp. 1457-1460, Mar. 1983.
-
(1983)
J. Appl. Phys
, vol.54
, Issue.3
, pp. 1457-1460
-
-
Lenahan, P.M.1
Dressendorfer, P.V.2
-
12
-
-
0021587257
-
Physical mechanisms contributing to device rebound
-
Dec
-
J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, "Physical mechanisms contributing to device rebound," IEEE Trans. Nucl. Sci., vol. 31, no. 6, pp. 1434-1438, Dec. 1984.
-
(1984)
IEEE Trans. Nucl. Sci
, vol.31
, Issue.6
, pp. 1434-1438
-
-
Schwank, J.R.1
Winokur, P.S.2
McWhorter, P.J.3
Sexton, F.W.4
Dressendorfer, P.V.5
Turpin, D.C.6
-
13
-
-
0024891801
-
An improved standard total dose test for CMOS space electronics
-
Dec
-
D. M. Fleetwood, P. S. Winokur, L. C. Riewe, and R. L. Pease, "An improved standard total dose test for CMOS space electronics," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 1963-1970, Dec. 1989.
-
(1989)
IEEE Trans. Nucl. Sci
, vol.36
, Issue.6
, pp. 1963-1970
-
-
Fleetwood, D.M.1
Winokur, P.S.2
Riewe, L.C.3
Pease, R.L.4
-
14
-
-
0020550151
-
A three micron CMOS technology for custom high reliability and radiation hardened integrated circuits
-
Rochester, NY, May
-
T. V. Nordstrom, R. W. Light, and F. W. Sexton, "A three micron CMOS technology for custom high reliability and radiation hardened integrated circuits," in Proc. IEEE Custom Integrated Circuits Conf., Rochester, NY, May 1983, pp. 43-47.
-
(1983)
Proc. IEEE Custom Integrated Circuits Conf
, pp. 43-47
-
-
Nordstrom, T.V.1
Light, R.W.2
Sexton, F.W.3
-
15
-
-
0034504425
-
Operation of the TRIUMF (20-500 MeV) proton irradiation facility
-
Reno, NV, Jul
-
E. W. Blackmore, "Operation of the TRIUMF (20-500 MeV) proton irradiation facility," in Proc. IEEE Radiation Effects Data Workshop. Workshop Record, Reno, NV, Jul. 2000, pp. 1-5.
-
(2000)
Proc. IEEE Radiation Effects Data Workshop. Workshop Record
, pp. 1-5
-
-
Blackmore, E.W.1
-
16
-
-
0032318033
-
Challenges in hardening technologies using shallow-trench isolation
-
Dec
-
M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, and R. S. Flores, "Challenges in hardening technologies using shallow-trench isolation," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2584-2592, Dec. 1998.
-
(1998)
IEEE Trans. Nucl. Sci
, vol.45
, Issue.6
, pp. 2584-2592
-
-
Shaneyfelt, M.R.1
Dodd, P.E.2
Draper, B.L.3
Flores, R.S.4
-
17
-
-
0004468181
-
Temperature dependence of MOS transistor characteristics below saturation
-
Dec
-
L. Vadasz and A. S. Grove, "Temperature dependence of MOS transistor characteristics below saturation," IEEE Trans. Electron Devices, vol. ED-13, no. 12, pp. 463-466, Dec. 1966.
-
(1966)
IEEE Trans. Electron Devices
, vol.ED-13
, Issue.12
, pp. 463-466
-
-
Vadasz, L.1
Grove, A.S.2
-
18
-
-
1542330805
-
Identification of yield-limiting defects in a 0.5 micron, shallow trench isolation technology
-
C. L. Henderson, C. E. Hembree, J. M. Soden, T. J. Headley, and B. L. Draper, "Identification of yield-limiting defects in a 0.5 micron, shallow trench isolation technology," in Proc. Int. Symp. Testing and Failure Analysis, 1999, pp. 405-412.
-
(1999)
Proc. Int. Symp. Testing and Failure Analysis
, pp. 405-412
-
-
Henderson, C.L.1
Hembree, C.E.2
Soden, J.M.3
Headley, T.J.4
Draper, B.L.5
-
19
-
-
33144460011
-
Radiation-induced off-state leakage current in commercial power MOSFETs
-
Dec
-
J. A. Felix, M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, J. R. Schwank, and S. M. Dalton, "Radiation-induced off-state leakage current in commercial power MOSFETs," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2378-2386, Dec. 2005.
-
(2005)
IEEE Trans. Nucl. Sci
, vol.52
, Issue.6
, pp. 2378-2386
-
-
Felix, J.A.1
Shaneyfelt, M.R.2
Dodd, P.E.3
Draper, B.L.4
Schwank, J.R.5
Dalton, S.M.6
-
20
-
-
0026367244
-
Hardness assurance for low-dose space applications
-
Dec
-
D. M. Fleetwood, P. S. Winokur, and T. L. Meisenheimer, "Hardness assurance for low-dose space applications," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1552-1559, Dec. 1991.
-
(1991)
IEEE Trans. Nucl. Sci
, vol.38
, Issue.6
, pp. 1552-1559
-
-
Fleetwood, D.M.1
Winokur, P.S.2
Meisenheimer, T.L.3
-
21
-
-
0005224623
-
Qualifying commercial ICs for space total-dose environments
-
Dec
-
F. W. Sexton, D. M. Fleetwood, C. C. Aldridge, G. Garrett, J. C. Pelletier, and J. I. Gaona, "Qualifying commercial ICs for space total-dose environments," IEEE Trans. Nucl. Sci., vol. 39, no. 6, pp. 1869-1875, Dec. 1992.
-
(1992)
IEEE Trans. Nucl. Sci
, vol.39
, Issue.6
, pp. 1869-1875
-
-
Sexton, F.W.1
Fleetwood, D.M.2
Aldridge, C.C.3
Garrett, G.4
Pelletier, J.C.5
Gaona, J.I.6
-
22
-
-
0017638751
-
CMOS hardness prediction for low-dose-rate environments
-
Dec
-
G. F. Derbenwick and H. H. Sander, "CMOS hardness prediction for low-dose-rate environments," IEEE Trans. Nucl. Sci., vol. 24, no. 6, pp. 2244-2247, Dec. 1977.
-
(1977)
IEEE Trans. Nucl. Sci
, vol.24
, Issue.6
, pp. 2244-2247
-
-
Derbenwick, G.F.1
Sander, H.H.2
-
23
-
-
0024913722
-
The nature of the trapped hole annealing process
-
Dec
-
A. J. Lelis, T. R. Oldham, H. E. Boesch, and F. B. McLean, "The nature of the trapped hole annealing process," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 1808-1815, Dec. 1989.
-
(1989)
IEEE Trans. Nucl. Sci
, vol.36
, Issue.6
, pp. 1808-1815
-
-
Lelis, A.J.1
Oldham, T.R.2
Boesch, H.E.3
McLean, F.B.4
-
24
-
-
0017741211
-
2/Si interface of hardened MOS capacitors
-
Dec
-
2/Si interface of hardened MOS capacitors," IEEE Trans. Nucl. Sci., vol. 24, no. 6, pp. 2113-2118, Dec. 1977.
-
(1977)
IEEE Trans. Nucl. Sci
, vol.24
, Issue.6
, pp. 2113-2118
-
-
Winokur, P.S.1
Boesch Jr., H.E.2
McGarrity, J.M.3
McLean, F.B.4
-
25
-
-
0024176412
-
Time dependence of interface trap formation in MOSFETs following pulsed irradiation
-
Dec
-
N. S. Saks, C. M. Dozier, and D. B. Brown, "Time dependence of interface trap formation in MOSFETs following pulsed irradiation," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1168-1177, Dec. 1988.
-
(1988)
IEEE Trans. Nucl. Sci
, vol.35
, Issue.6
, pp. 1168-1177
-
-
Saks, N.S.1
Dozier, C.M.2
Brown, D.B.3
-
26
-
-
0031386208
-
Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures
-
Dec
-
S. C. Witczak, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, R. C. Lacoe, D. C. Mayer, J. M. Puhl, R. L. Pease, and J. S. Suehle, "Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 1989-2000, Dec. 1997.
-
(1997)
IEEE Trans. Nucl. Sci
, vol.44
, Issue.6
, pp. 1989-2000
-
-
Witczak, S.C.1
Schrimpf, R.D.2
Fleetwood, D.M.3
Galloway, K.F.4
Lacoe, R.C.5
Mayer, D.C.6
Puhl, J.M.7
Pease, R.L.8
Suehle, J.S.9
-
27
-
-
0030361136
-
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides
-
Dec
-
D. M. Fleetwood, L. C. Riewe, J. R. Schwank, S. C. Witczak, and R. D. Schrimpf, "Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2537-2546, Dec. 1996.
-
(1996)
IEEE Trans. Nucl. Sci
, vol.43
, Issue.6
, pp. 2537-2546
-
-
Fleetwood, D.M.1
Riewe, L.C.2
Schwank, J.R.3
Witczak, S.C.4
Schrimpf, R.D.5
-
28
-
-
0029518477
-
Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs
-
Dec
-
D. M. Schmidt, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, R. J. Graves, G. H. Johnson, K. F. Galloway, and W. E. Combs, "Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs," IEEE Trans. Nucl. Sci., vol. 42, no. 6, pp. 1541-1549, Dec. 1995.
-
(1995)
IEEE Trans. Nucl. Sci
, vol.42
, Issue.6
, pp. 1541-1549
-
-
Schmidt, D.M.1
Fleetwood, D.M.2
Schrimpf, R.D.3
Pease, R.L.4
Graves, R.J.5
Johnson, G.H.6
Galloway, K.F.7
Combs, W.E.8
-
29
-
-
0032100014
-
Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits
-
Jun
-
R. L. Pease, M. Shaneyfelt, P. Winokur, D. Fleetwood, J. Gorelick, S. McClure, S. Clark, L. Cohn, and D. Alexander, "Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits," IEEE Trans. Nucl. Sci., vol. 45, no. 3, pp. 1425-1430, Jun. 1998.
-
(1998)
IEEE Trans. Nucl. Sci
, vol.45
, Issue.3
, pp. 1425-1430
-
-
Pease, R.L.1
Shaneyfelt, M.2
Winokur, P.3
Fleetwood, D.4
Gorelick, J.5
McClure, S.6
Clark, S.7
Cohn, L.8
Alexander, D.9
|