Radiation-induced off-state leakage current in commercial power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2378-2386

  Felix, James A ^a,b   Shaneyfelt, Marty R ^a,b   Dodd, Paul E ^a,b   Draper, Bruce L ^b   Schwank, James R ^a,b   Dalton, Scott M ^b  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Commercial off the shelf (COTS); Interface trap; Leakage current; Oxide trapped charge; Power MOSFET; Radiation effects; Radiation hardened; Radiation response; Simulation; Vertical double diffused power MOSFET (VDMOSFET)

Indexed keywords

COMMERCIAL-OFF-THE-SHELF (COTS); INTERFACE TRAP; OXIDE TRAPPED CHARGE; POWER MOSFET; RADIATION RESPONSE; VERTICAL DOUBLE DIFFUSED POWER MOSFET (VDMOSFET);

COMPUTER SIMULATION; ELECTRODES; LEAKAGE CURRENTS; RADIATION EFFECTS; RADIATION HARDENING; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 33144460011     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860724     Document Type: Conference Paper

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