Local retarding field for ions towards a positively biased substrate in plasma and its application to soft ion-bombardment processing

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Teii, Kungen ^a   Matsumoto, Seiichiro ^b,c  

^a KYUSHU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Ceramic Forum Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON CYCLOTRON RESONANCE; ION BOMBARDMENT; NANOSTRUCTURED MATERIALS; PLASMA SHEATHS; PLASMAS; SILICON WAFERS;

NANOCRYSTALLINE DIAMOND DEPOSITION; PLASMA POTENTIAL; POSITIVELY BIASED SUBSTRATE; SOFT ION BOMBARDMENT;

IONS;

EID: 33846281230     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402972     Document Type: Article

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