Comparison of heavy ion and proton induced combinatorial and sequential logic error rates in a deep submicron process

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2120-2124

  Gadlage, Matthew J ^a   Eaton, Paul H ^b   Benedetto, Joseph M ^c   Turflinger, Thomas L ^a  

^a NAVAL SURFACE WARFARE CENTER   (United States)

^b Microelectronics Research and Development Corporation   (United States)

^c MISSION RESEARCH CORPORATION   (United States)

Author keywords

Combinational logic circuits; Ion radiation effects; Proton radiation effects; Sequential logic circuits

Indexed keywords

CMOS INTEGRATED CIRCUITS; ERRORS; HEAVY IONS; IRRADIATION; PROTONS;

COMBINATIONAL LOGIC CIRCUITS; ION RADIATION EFFECTS; PROTON RADIATION EFFECTS; SEQUENTIAL LOGIC CIRCUITS;

COMBINATORIAL CIRCUITS;

EID: 33144477941     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860678     Document Type: Conference Paper

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