Radiation dose effects in trigate SOI MOS transistors

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3237-3241

  Colinge, J P ^a,b   Orozco, A ^a,b   Rudee, J ^b   Xiong, Weize ^a,c   Cleavelin, C Rinn ^c   Schulz, T ^d   Schrufer K ^a,d   Knoblinger, G ^a,e   Patruno, P ^f  

^a IEEE   (United States)

^b University of California Davis   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d INFINEON TECHNOLOGIES AG   (Germany)

^e INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^f PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

MOSFETs; Semiconductor device radiation effects; Silicon on insulator technology

Indexed keywords

INSULATOR TECHNOLOGY; INTERFACE TRAP GENERATION; SEMICONDUCTOR DEVICE RADIATION EFFECTS; SILICON TECHNOLOGY;

DOSIMETRY; GAMMA RAYS; IRRADIATION; LOGIC GATES; RADIATION EFFECTS; TRANSCONDUCTANCE; TRANSISTORS;

MOS DEVICES;

EID: 33846272723     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.885841     Document Type: Conference Paper

References (9)

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