Device analysis methods for physical cell parameters of CdTe/CdS solar cells

Thin Solid Films

Volumn 361, Issue , 2000, Pages 288-292

  Batzner D L ^a   Oszan M E ^b   Bonnet, D ^c   Bucher K ^d  

^a ETH ZURICH   (Switzerland)

^b S ^*  (United Kingdom)

^c ANTEC GmbH   (Germany)

^d FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; HETEROJUNCTIONS; METALLIZING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING CADMIUM TELLURIDE; THIN FILM DEVICES;

MINORITY CARRIER DIFFUSION LENGTH;

CADMIUM SULFIDE SOLAR CELLS;

EID: 0343628850     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00862-7     Document Type: Article

References (8)

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8. D.L. Bätzner, Diploma Thesis at the Fraunhofer Institute for Solar Energy Systems ISE, 1998, unpublished.