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Volumn 11, Issue 6, 2005, Pages 1278-1282

Novel on-chip fully monolithic integration of GaAs devices with completely fabricated Si CMOS circuits

Author keywords

Analog to digital converter (ADC); GaAs on Si; Integrated optoelectronic CMOS circuit; Metal semiconductormetal (MSM) switch; Molecular beam epitaxy (MBE); Monolithic integration; On chip integration; Optical receiver; Photoconductive switch

Indexed keywords

GAAS ON SI; METAL-SEMICONDUCTORMETAL (MSM) SWITCH; MONOLITHIC INTEGRATION; ON-CHIP INTEGRATION;

EID: 31644447902     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2005.860991     Document Type: Article
Times cited : (7)

References (8)
  • 1
    • 3042551747 scopus 로고    scopus 로고
    • Photonic AJD conversion using lowtemperature-grown GaAs MSM switches integrated with Si-CMOS
    • Dec.
    • R. Urata, L. Y. Nathawad, R. Takahashi, K. Ma, D. A. B. Miller, B. A. Wooley, and J. S. Harris Jr., "Photonic AJD conversion using lowtemperature-grown GaAs MSM switches integrated with Si-CMOS," J. Lightwave Technol., vol. 21, no. 12, pp. 3104-3115, Dec. 2003.
    • (2003) J. Lightwave Technol. , vol.21 , Issue.12 , pp. 3104-3115
    • Urata, R.1    Nathawad, L.Y.2    Takahashi, R.3    Ma, K.4    Miller, D.A.B.5    Wooley, B.A.6    Harris Jr., J.S.7
  • 2
    • 0036925670 scopus 로고    scopus 로고
    • Ultrafast sampling using low-temperaturegrown GaAs MSM switches integrated with CMOS amplifier for photonic A/D conversion
    • R. Urata, L. Y. Nathawad, K. Ma, R. Takahashi, D. A. B. Miller, B. A. Wooley, and J. S. Harris Jr., "Ultrafast sampling using low-temperaturegrown GaAs MSM switches integrated with CMOS amplifier for photonic A/D conversion," in Proc. IEEE LEOS Annu. Meeting, vol. 2, 2002, pp. 809-810.
    • (2002) Proc. IEEE LEOS Annu. Meeting , vol.2 , pp. 809-810
    • Urata, R.1    Nathawad, L.Y.2    Ma, K.3    Takahashi, R.4    Miller, D.A.B.5    Wooley, B.A.6    Harris Jr., J.S.7
  • 4
    • 3042641839 scopus 로고    scopus 로고
    • Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches
    • Jun.
    • K. Ma, R. Urata, D. A. B. Miller, and J. S. Harris Jr., "Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches," IEEE J. Quantum Electron., vol. 40, no. 6, pp. 800-805, Jun. 2004.
    • (2004) IEEE J. Quantum Electron. , vol.40 , Issue.6 , pp. 800-805
    • Ma, K.1    Urata, R.2    Miller, D.A.B.3    Harris Jr., J.S.4
  • 5
    • 1542334638 scopus 로고    scopus 로고
    • Low temperature growth of GaAs on Si substrates for ultra-fast photoconductive switches
    • Paper G3.14
    • K. Ma, R. Urata, D. A. B. Miller, and J. S. Harris Jr., "Low temperature growth of GaAs on Si substrates for ultra-fast photoconductive switches," in Proc. Mater. Res. Soc. Symp., vol. 768: Paper G3.14, 2003, pp. 81-86,
    • (2003) Proc. Mater. Res. Soc. Symp. , vol.768 , pp. 81-86
    • Ma, K.1    Urata, R.2    Miller, D.A.B.3    Harris Jr., J.S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.