Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?

Applied Physics Letters

Volumn 90, Issue 2, 2007, Pages

  Buyanova, I A ^a   Chen, W M ^a   Izadifard, M ^b   Pearton, S J ^c   Bihler, C ^d   Brandt, M S ^d   Hong, Y G ^e   Tu, C W ^e  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SHAHROOD UNIVERSITY OF TECHNOLOGY   (Iran)

^c University of Florida   (United States)

^d WALTER SCHOTTKY INSTITUT   (Germany)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

H TREATMENT; HYDROGEN PASSIVATION; HYDROGEN PROFILES;

ALLOYING ELEMENTS; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; HYDROGEN; MASS SPECTROMETRY; PASSIVATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33846215932     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2425006     Document Type: Article

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