Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 568-570

  Buyanova, I A ^a   Izadifard, M ^a   Seppanen T ^a   Birch, J ^a   Chen, W M ^a   Pearton, S J ^b   Polimeni, A ^c   Capizzi, M ^c   Brandt, M S ^d   Bihler, C ^d   Hong, Y G ^e   Tu, C W ^e  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF FLORIDA   (United States)

^c SAPIENZA UNIVERSITY OF ROME   (Italy)

^d WALTER SCHOTTKY INSTITUT   (Germany)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electronic structure; GaNP; Hydrogen; Passivation

Indexed keywords

COMPRESSIVE STRENGTH; CRYSTAL LATTICES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HYDROGEN; HYDROGENATION; PASSIVATION; PLASMAS; STRAIN; TENSILE STRENGTH; X RAY DIFFRACTION;

DC H PLASMA; EPILAYERS; GANP; IMPLANTATION DAMAGE; KAUFMAN SOURCE;

GALLIUM ALLOYS;

EID: 33645147664     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.143     Document Type: Conference Paper

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