Creep and microstructural evolution at high temperature of liquid-phase-sintered silicon carbide

Journal of the American Ceramic Society

Volumn 90, Issue 1, 2007, Pages 163-169

  Meléndez Martinez, Juan J ^a,b   Castillo Rodríguez, Miguel ^a   Domínguez Rodríguez, Arturo ^a,c   Ortiz, Angel L ^b,c   Guiberteau, Fernando ^b  

^a UNIVERSITY OF SEVILLE   (Spain)

^b UNIVERSITY OF EXTREMADURA   (Spain)

^c AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBOTHERMAL REDUCTION; COMPRESSIVE CREEP; MICROSTRUCTURAL EVOLUTION;

CERAMIC MATERIALS; CREEP; CRYSTAL GROWTH; FAILURE ANALYSIS; MICROSTRUCTURE; SINTERING; VISCOUS FLOW;

SILICON CARBIDE;

EID: 33846179360     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2006.01350.x     Document Type: Article

References (37)

1. J. J. Meléndez-Martínez and A. Domínguez- Rodríguez, "Creep of Silicon Nitride," Prog. Mat. Sci., 49 [1] 19-107 (2004).
2. N. P. Padture, "In-Situ Toughened Silicon Carbide," J. Am. Ceram. Soc., 77 [2] 519-23 (1994).
3. K. A. Schwetz, "Silicon Carbide-Based Hard Materials"; pp. 683-740 in Handbook of Ceramic Hard Materials, Edited by R. Riedel. Wiley-VCH. Weinheim, Germany, 2000.
4. R. P. Jensen, W. E. Luecke, N. P. Padture, and S. M. Wiederhorn, "High-Temperature Properties of Liquid-Phase-Sintered α-SiC," Mater. Sci. Eng., A282 [1-2] 109-14 (2000).
5. V. S. R. Murthy, H. Kobayashi, N. Tamari, S. Tsurekawa, T. Watanabe, and K. Kato, "Effect of Doping Elements on the Friction and Wear Properties of SiC in Unlubricated Sliding Condition." Wear, 257 [1-2] 89-96 (2004).
6. L. S. Sigl, "Thermal Conductivity of Liquid-Phase-Sintered Silicon Carbide," J. Eur. Ceram. Soc., 23 [7] 1115-22 (2003).
7. 3 (RE = Y, Yb)," J. Am. Ceram. Soc., 85 [4] 1007-9 (2002).
8. S. J. Dapkunas, "Ceramic Heat-Exchangers," Am. Ceram. Soc. Bull., 67 [2] 388-91 (1988).
9. Y.-W. Kim, M. Mitomo, and T. Nishimura, "Heat-Resistant Silicon Carbide with Aluminum Nitride and Erbium Oxide," J. Am. Ceram. Soc., 84 [9] 2060-4 (2001).
10. 3 System," J. Am. Ceram. Soc., 80 [4] 874-8 (1997).
11. T. Grande, H. Sommerset, E. Hagen, K. Wiik, and M. A. Einarsrud, "Effect of Weight Loss on Liquid-Phase-Sintered Silicon Carbide," J. Am. Ceram. Soc., 80 [4] 1047-52 (2004).
12. A. Gallardo-López, A. Muñoz, J. Martínez- Fernández, and A. Domínguez-Rodríguez, "High- Temperature Compressive Creep of Liquid-Phase-Sintered Silicon Carbide," Acta Mater., 47 [7] 2185-95 (1999).
13. S. Honda, T. Nagano, K. Kaneko, and H. Kodama, "Compressive Deformation Behavior of Al-Doped β-SiC at Elevated Temperature," J. Eur. Ceram. Soc., 22 [6] 979-85 (2002).
14. Y. Shinoda, M. Yoshida, T. Akatsu, and F. Wakai, "Effect of Amount of Boron Doping on Compression Deformation of Fine-Grained Silicon Carbide at Elevated Temperature," J. Am. Ceram. Soc., 87 [8] 1525-9 (2004).
15. S. M. Wiederhorn, B. J. Hockey, and J. D. French, "Mechanisms of Deformation of Silicon Nitride and Silicon Carbide at High Temperatures," J. Eur. Ceram. Soc., 19 [13-14] 2273-84 (1999).
16. M. L. Duval-Riviere, C. Carry, and J. Vicens, "Microstructural Study of Deformation Mechanisms in Polycrystalline α-SiC Deformed at High Temperature," Phys. Status Solidi, 155, 6-82 (1996).
17. Y. Shinoda, M. Yoshida, T. Akatsu, and F. Wakai, "Compression Deformation Mechanism of Silicon Carbide: I, Fine-Grained Boron- and Carbon-Doped β-Silicon Carbide Fabricated by Hot Isostatic Pressing," J. Am. Ceram. Soc., 87 [10] 1919-26 (2004).
18. A. Djemel, J. Cadoz, and J. Philibert, "Deformation of Polycrystalline α-SiC"; pp. 381-94 in Creep and Fracture of Engineering Materials and Structures, Edited by B. Wilshire and D. R. J. Owen. Pineridge Press, Swansea, U.K. 1981.
19. J. E. Lane, C. H. Carter Jr., and R. F. Davis, "Kinetics and Mechanisms of High-Temperature Creep in Silicon Carbide: III, Sintered α-Silicon Carbide," J. Am. Ceram. Soc., 71 [4] 281-95 (1981).
20. H. Tanaka and Y. Inomata, "Diffusional Creep in Sintered Silicon Carbide," J. Jpn. Ceram. Soc., 93 [1] 45-50 (1985).
21. G. Grathwohl, T. H. Reets, and F. Thummler, "Creep of Hot-Pressed and Sintered SiC with Different Sintering Additives," Sci. Ceram., 11, 425-31 (1981).
22. R. D. Nixon and R. F. Davis, "Diffusion Accommodated Grain Boundary Sliding and Dislocation Glide in the Creep of Sintered Alpha Silicon Carbide," J. Am. Ceram. Soc., 75 [7] 1786-95 (1992).
23. Z. C. Jou A.V.Virkar and R. A. Cutler, "High Temperature Creep of SiC Densified Using a Transient Liquid Phase," J. Mater. Res., 6 [9] 1945-49 (1991).
24. M. Castillo-Rodríguez, A. Muñoz, and A. Domínguez- Rodríguez, "Correlation between Microstructure and Creep Behavior in Liquid-Phase-Sintered α-Silicon Carbide," J. Am. Ceram. Soc., 89 [3] 960-7 (2006).
25. J. J. Meléndez-Martínez, D. Gómez-García, M. Jiménez-Melendo, and A. Domínguez-Rodríguez, "Creep Mechanism of Gas-Pressure-Sintered Silicon Nitride Polycrystals I. Macroscopic and Microscopic Experimental Study," Philos. Mag., A84 [31] 3375-86 (2004).
26. A. L. Ortiz, F. L. Cumbrera, F. Sánchez-Bajo, F. Guiberteau, H. Xu, and N. P. Padture, "Quantitative Phase-Composition Analysis of Liquid-Phase-Sintered Silicon Carbide Using the Rietveld Method," J. Am. Ceram. Soc., 83 [9] 2282-6 (2000).
27. 3 Additions," J. Mater. Sci., 37, 441924 (2002).
28. L. S. Sigl and H.-J. Kleebe, "Core/Rim Structure of Liquid-Phase-Sintered Silicon Carbide," J. Am. Ceram. Soc., 76, 773-6 (1993).
29. 3," J. Eur. Ceram. Soc., 26 [12] 2397-405 (2006).
30. 2 Atmosphere," J. Eur. Ceram. Soc., 22 [2] 263-70 (2002).
31. D. Gómez-García, J. Martínez-Fernández, A. Domínguez-Rodríguez, A. Eveno, and J. Castaing, "Deformation Mechanisms for High-Temperature Creep of High Yttria Content Stabilized Zirconia Single Crystals," Acta Mater., 44 [3] 991-9 (1996).
32. J. R. Dryden, D. Kucerovsky, and D. S. Wilkinson, "Creep Deformation due to a Viscous Grain Boundary Phase," Acta Metall., 37 [7] 2007-15 (1989).
33. M. M. Chadwick, D. S. Wilkinson, and J. R. Dryden, "Creep due to a Non-Newtonian Grain Boundary Phase," J. Am. Ceram. Soc., 79 [9] 2327-34 (1992).
34. J. W. Hinze and H. C. Graham, "The Active Oxidation of Si and SiC in the Viscous Glass-Flow Regime," J. Electrochem. Soc., 12 [7] 1066-73 (1976).
35. M. Balat, G. Flamant, G. Male, and G. Pichelin, "Active to Passive Transition in the Oxidation of Silicon Carbide at High Temperature and Low Pressure in Molecular and Atomic Oxygen," J. Mater. Sci., 27, 697-703 (1992).
36. 3 Composites," J. Mater. Res., 7 [9] 2585-92 (1992).
37. V. V. Pujar, R. P. Jensen, and N. P. Padture, "Densification of Liquid-PhaseSintered Silicon Carbide," J. Mater. Sci. Lett., 19, 1011-4 (2000).