Effect of amount of boron doping on compression deformation of fine-grained silicon carbide at elevated temperature

Journal of the American Ceramic Society

Volumn 87, Issue 8, 2004, Pages 1525-1529

  Shinoda, Yutaka ^a   Yoshida, Michiyuki ^a   Akatsu, Takashi ^a   Wakai, Fumihiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSION TESTING; DEFORMATION; DOPING (ADDITIVES); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; PLASTIC FLOW; SCANNING ELECTRON MICROSCOPY; STRAIN RATE;

COMPRESSION DEFORMATION; GRAIN BOUNDARIES DIFFUSION; HIGH TEMPERATURE DEFORMATION;

SILICON CARBIDE;

EID: 4544239749     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2004.01525.x     Document Type: Article

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