Compressive deformation behavior of Al-doped β-SiC at elevated temperature

Journal of the European Ceramic Society

Volumn 22, Issue 6, 2002, Pages 979-985

  Honda, Sawao ^a   Nagano, Takayuki ^a   Kaneko, Kenji ^a   Kodama, Hironori ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Al; Creep; Grain boundary phase; Mechanical properties; SiC

Indexed keywords

GRAIN BOUNDARIES; HELIUM; HOT PRESSING; PHASE TRANSITIONS; PYROLYSIS; SILICON COMPOUNDS; STRAIN HARDENING; TESTING;

AMORPHOUS PHASES;

DEFORMATION;

COMPRESSIVE STRENGTH; DEFORMATION; GRAIN BOUNDARY; MECHANICAL PROPERTY; SILICON CARBIDE;

EID: 0036604628     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(01)00406-X     Document Type: Article

References (11)

1. The role of boron and carbon in the sintering of SiC
2. Pressure-sintered silicon carbide
3. The effect of doped aluminum on thermal stability of 4H- and 6H-SiC
4. Microstructural study of deformation mechanisms in polycrystalline α-SiC deformed at high temperature
5. Study of fracture behavior of very fine-grained silicon carbide ceramics
6. Experimental correlations for high-temperature creep
7. 14C in polycrystalline β-SiC
8. 30Si in polycrystalline β-SiC
9. Tensile ductility of Aldoped β-silicon carbide at elevated temperature
10. Effect of weight loss on liquid-phase sintered silicon carbide
11. Effect of atmosphere on weight-loss of sintered silicon carbide during heat treatment