Compression deformation mechanism of silicon carbide: 1, fine-grained boron- And carbon-doped β-silicon carbide fabricated by hot isostatic pressing

Journal of the American Ceramic Society

Volumn 87, Issue 10, 2004, Pages 1919-1926

  Shinoda, Yutaka ^a   Yoshida, Michiyuki ^a   Akatsu, Takashi ^a   Wakai, Fumihiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BORON; CARBON; COMPRESSIBILITY; CREEP TESTING; DEFORMATION; GRAIN SIZE AND SHAPE; HOT ISOSTATIC PRESSING; SEMICONDUCTOR DOPING;

COMPRESSION DEFORMATION; CREEP RESISTANCE; STRESS EXPONENTS;

SILICON CARBIDE;

EID: 8644269604     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2004.tb06341.x     Document Type: Article

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