Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 215-220

  Łupina, Grzegorz ^a   Da̧browski, Jarek ^a   Formanek, Peter ^a   Schmeißer, Dieter ^b   Sorge, Roland ^a   Wenger, Christian ^a   Zaumseil, Peter ^a   Müssig, Hans Joachim ^a  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

High k dielectrics; Interface reaction; Photoelectron spectroscopy

Indexed keywords

ANNEALING; COMPOSITION; EVAPORATION; MOSFET DEVICES; PERMITTIVITY; PRASEODYMIUM; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE EQUIVALENT THICKNESS (CET); GATE ELECTRODES; INTERFACE REACTIONS; SOLID-STATE REACTIONS;

DIELECTRIC FILMS;

EID: 9544227393     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.010     Document Type: Conference Paper

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