Covalent and localized contributions of Pr4f states at the interface of Pr2O3 to Si(001)

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 221-226

  Schmeißer, Dieter ^a   Müssig, Hans Joachim ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; BANDWIDTH; CHARGE TRANSFER; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); PERMITTIVITY; PHOTOELECTRON SPECTROSCOPY; RAMAN SCATTERING; SILICON;

DENSITY OF STATES (DOS); GATE INSULATORS; LIGANDS; VALENCE BANDS (VB);

PRASEODYMIUM;

EID: 9544230715     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.130     Document Type: Conference Paper

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