Fabrication of Pt/Sr 2Bi 2Ta 2O 9/Y 2O 3/Si FET and sub-circuit model for full memory chip design

Journal of the Korean Physical Society

Volumn 47, Issue SUPPL. 2, 2005, Pages

  Shim, Sun Il ^a   Kim, Ik Soo ^a   Park, Min Chul ^a   Kim, Yong Tae ^a   Kim, Seong Il ^a   Lee, Chang Woo ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Kookmin University   (South Korea)

Author keywords

Ferroelectric memory; MFISFET; SBT; Sub circuit; Y 2O 3

Indexed keywords

EID: 27444435465     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (9)

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