Optical observation of carrier accumulation in single-walled carbon nanotube transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 42-45, 2006, Pages

  Takenobu, Taishi ^a,b   Murayama, Yuji ^a   Shiraishi, Masashi ^c   Iwasa, Yoshihiro ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Field effect device; Optical properties; Single walled carbon nanotube; Thin film

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; FIELD EFFECT SEMICONDUCTOR DEVICES; MATHEMATICAL MODELS; OPTICAL PROPERTIES; SINGLE-WALLED CARBON NANOTUBES (SWCN);

ACCUMULATED CARRIERS; NANOSCALE WIRE-FORM FIELD-EFFECT TRANSISTOR MODELS;

THIN FILM TRANSISTORS;

EID: 33846083583     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1190     Document Type: Article

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