Modeling and simulation of the lag effect in a deep reactive ion etching process

Journal of Micromechanics and Microengineering

Volumn 16, Issue 12, 2006, Pages 2570-2575

  Tan, Yiyong ^a,b   Zhou, Rongchun ^a   Zhang, Haixia ^a   Lu, Guizhang ^b   Li, Zhihong ^a  

^a PEKING UNIVERSITY   (China)

^b NANKAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BULLETIN BOARDS; COMPOSITE MICROMECHANICS; COMPUTER SIMULATION; ELECTRIC SHIELDING; IONS;

DEEP REACTIVE ION ETCHING (DRIE) PROCESS; LAG EFFECT; MODELING;

REACTIVE ION ETCHING;

EID: 33846060729     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/16/12/008     Document Type: Article

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