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Volumn 14, Issue 7, 2004, Pages 851-858

Simulation of the Bosch process with a string-cell hybrid method

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; EXTRACTION; INDUCTIVELY COUPLED PLASMA; MECHANICAL PROPERTIES; MICROELECTROMECHANICAL DEVICES; PARAMETER ESTIMATION; POLYMERIZATION; SILICON WAFERS; TRENCHING;

EID: 3142734901     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/14/7/003     Document Type: Article
Times cited : (60)

References (20)
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  • 2
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    • Integrated polysilicon DRIE bulk silicon micromachining for an electrostatic torsional actuator
    • Yeh J-L A, Hongrui Jiang and Tien N C 1999 Integrated polysilicon DRIE bulk silicon micromachining for an electrostatic torsional actuator Microelectromech. Syst. J. 8 456-65
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    • Yeh, J.-L.A.1    Jiang, H.2    Tien, N.C.3
  • 4
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    • A novel isolation technology in bulk micromachining using deep reactive ion etching and a polysilicon refill
    • Zhang D, Li Z, Li T and Wu G 2001 A novel isolation technology in bulk micromachining using deep reactive ion etching and a polysilicon refill J. Micromech. Microeng. 11 13-9
    • (2001) J. Micromech. Microeng. , vol.11 , pp. 13-19
    • Zhang, D.1    Li, Z.2    Li, T.3    Wu, G.4
  • 5
    • 0030100650 scopus 로고    scopus 로고
    • Silicon fusion bonding and deep reactive ion etching: A new technology for microstructures
    • Klaassen E H et al 1996 Silicon fusion bonding and deep reactive ion etching: a new technology for microstructures Sensors Actuators A 52 132-9
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    • Klaassen, E.H.1
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    • Lärmer F and Schilp A Method of anisotropically etching silicon US Patent Specification 5501893, German Patent Specification DE4241045
    • Lärmer, F.1    Schilp, A.2
  • 8
    • 0036601273 scopus 로고    scopus 로고
    • Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)
    • Kuo-Shen Chen, Ayon A A, Xin Zhang and Spearing S M 2002 Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE) Microelectromech. Syst. J. 11 264-75
    • (2002) Microelectromech. Syst. J. , vol.11 , pp. 264-275
    • Chen, K.-S.1    Ayon, A.A.2    Zhang, X.3    Spearing, S.M.4
  • 9
    • 0020764331 scopus 로고
    • Step coverage simulation and measurement in a dc planar magnetron sputtering system
    • Blech I A and Bander Plas H A 1983 Step coverage simulation and measurement in a dc planar magnetron sputtering system J. Appl. Phys. 54 3489
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  • 10
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    • Simulation of step coverage profiles and film microstructure
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    • Dry etching topography simulator with a new surface reaction model Modern
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.