High aspect ratio silicon trench fabrication by inductively coupled plasma

Microsystem Technologies

Volumn 6, Issue 3, 2000, Pages 106-108

  Chung, C K ^a   Lu, H C ^a   Jaw, T H ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006493614     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s005420050008     Document Type: Article

References (7)

1. Kassing R; Rangelow IW (1996) Etching process for High Aspect ratio Micro Systems Technology (HARMST). J Microsystems Technol 3: 20-27
2. Juan WH; Pang SW (1995) High-aspect-ratio Si etching for microsensor fabrication. J Vac Sci Technol A 13: 834-838
3. 2. Microelectronic Eng 27: 453-456
4. Jansen H; Boer M de; Legtenberg R; Elwenspoek M (1995) The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control. J Micromech Microeng 5: 115-120
5. Laermer F; Schilp A (1994) Method of Anisotropically Etching Silicon. German Patent: DE4241045
6. Bhardwaj JK; Ashraf H (1995) Advanced silicon etching using high density plasma. Proc. SPIE Micromach. and Microfab. Process Technology 2639: 224-233
7. Jansen H; Boer M de; Burger J; Legtenberg R; Elwenspoek M (1995) The black silicon method II: the effect of mask material and loading on the reactive ion etching in deep silicon trenches. Microelectronic Eng 27: 475-480